Atomic layer deposition of Nb-doped ZnO for thin film transistors
نویسندگان
چکیده
منابع مشابه
Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique
This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10-13A, I on/I off ratio ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2016
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4968194